dm th4007spd q document number: d s 38393 rev. 1 - 2 1 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information 40v 175c dual n - channel enhancement mode mosfet powerdi product summary b v dss r ds(on) max i d max t c = + 25c (note 10 ) 40v 8.6m ? @ v gs = 10 v 45 a description and applications this mosfet is designed to meet th e stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? rated to + 175 c C i deal for h igh a mbient t emperature e nvironments ? high conversion efficiency ? low r ds (on ) C minimi zes on - state losses ? low input capacitance ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanic al data ? case: powerdi ? 5060 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable pe r mil - std - 202, method 208 ? weight: 0.0 97 grams ( a pproximate) ordering information (note 5 ) part number case packaging dm t h 4007 s pd q - 13 powerdi5060 - 8 2 , 5 00 /tape & reel note s: 1 . no purposely added lead. fully eu dire ctive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antim ony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. please refer t o http://www.diodes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . pin out top view equivalent circuit bottom view top view pin1 s 1 d 2 d 1 g 2 d 1 d 2 g1 s 2 powerdi5060 - 8 powerdi is a registered trademark of diodes incorporated. d 1 s 1 g 1 d 2 s 2 g 2
dm th4007spd q document number: d s 38393 rev. 1 - 2 2 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information marking information maximum ratings ( @ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss 4 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) t c = +25c (note 10 ) t c = + 10 0c i d 45 a 38.1 continuous drain c urrent (note 6 ) t a = +25c t a = +70c i d 14.2 11.9 a pulsed drain curren t ( 10 s pulse, duty cycle = 1% ) i dm 90 a maximum continuous body diode f orward current (note 7 ) i s 34 a avalanche current, l = 0.1mh i as 20 a avalanche energy, l = 0.1mh e as 20 mj thermal characteristics characteristic symbol value unit total power dissipation (note 6 ) t a = + 25 c p d 2.6 w thermal resistance, junction to ambient (note 6 ) r ja 5 7 c/w total power dissipation (note 7 ) t c = + 25 c p d 37.5 w thermal resistance, junction to case (note 7 ) r j c 4 c/w operating and storage temperature range t j, t stg - 55 to +1 75 c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz . co pper, with thermal b ias to bottom layer 1inch square copper plate . 7. thermal resistance from junction to soldering point (on the exposed drain pad). = manufacturers marking s 1 d 1 g1 s 2 g 2 d 1 d 2 d 2 h 4007sd yy ww
dm th4007spd q document number: d s 38393 rev. 1 - 2 3 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information e lectrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 4 0 gs = 0v, i d = 1m a zero gate voltage drain current i dss ds = 32 v , v gs = 0v gate - source leakage i gss gs = 20 v , v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) 2 ds = v gs , i d = 250 a ds (on) 8.6 m ? gs = 10 v, i d = 17 a diode forward voltage v sd gs = 0v, i s = 17 a dynamic characteristics (note 9 ) input capacitance c iss ds = 30 v, v gs = 0v , f = 1 mhz output capacitance c oss rss g ? ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g ds = 30 v , i d = 2 0 a, v gs = 10 v gate - source charge q gs gd d(on) dd = 30 v, v gs = 10 v, i d = 20 a , r g = 3 ? r d(off) f rr ? ? f = 20 a, di/dt = 1 00a/s rr ? ? notes: 8 . short duration pulse test used to minimize self - heating effect. 9 . guarantee d by design. not subject to product testing. 10 . package limited.
dm th4007spd q document number: d s 38393 rev. 1 - 2 4 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0 10 20 30 40 50 0 0.5 1 1.5 2 2.5 3 v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 5.0v gs v = 10v gs v = 6.0v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 1 2 3 4 5 6 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 50 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) i , drain source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage v = 10v gs 0 5 10 15 20 25 30 35 40 45 50 2 4 6 8 10 12 14 16 18 20 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v , gate-source voltage (v) gs figure 4 typical drain-source on-resistance vs. gate-source voltage i = 17a d 0.003 0.005 0.007 0.009 0.011 0.013 0.015 0 5 10 15 20 25 30 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain source current (a) d figure 5 typical on-resistance vs. drain current and temperature v = 10v gs t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? t = 175 c a ? t = -55 c a ? t , junction temperature ( c) figure 6 on-resistance variation with temperature j ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 175 v = v i = 20a gs d 10
dm th4007spd q document number: d s 38393 rev. 1 - 2 5 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information 0 0.005 0.01 0.015 0.02 -50 -25 0 25 50 75 100 125 150 175 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature v = 10v gs i = 15a d t , junction temperature ( c) figure 8 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0.5 1 1.5 2 2.5 3 3.5 4 -50 -25 0 25 50 75 100 125 150 175 i = 1ma d i = 250a d 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 i , s o u r c e c u r r e n t ( a ) s v , source-drain voltage (v) sd figure 9 diode forward voltage vs. current t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 175 c a ? t = 150 c a ? t = 125 c a ? v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t c iss c oss c rss 10 100 1000 10000 0 5 10 15 20 25 30 35 40 f = 1mhz q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e s h o l d v o l t a g e ( v ) g s 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 v = 30v i = a ds d 20 0.1 1 10 100 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d r ds(on) limited t = 175c j (m ax ) t = 25c c v = 10v gs single pulse dut on 1 * mrp board p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w p = 1s w v , drain-source voltage (v) ds figure 12 soa, safe operation area
dm th4007spd q document number: d s 38393 rev. 1 - 2 6 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r ? ? jc jc r = 4c/w ? jc duty cycle, d = t1/ t2 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t1, pulse duration time (sec) figure 13 transient thermal resistance
dm th4007spd q document number: d s 38393 rev. 1 - 2 7 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. powerdi5060 - 8 (type c) powerdi5060 - 8 (type c) dim min max typ a 0.90 1.10 1.00 a1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 d 5.15 bsc d1 4.85 4.95 4.90 d2 1.40 1.60 1.50 d3 - - 3.98 e 6.15 bsc e1 5.75 5.85 5.80 e2 3.56 3.76 3.66 e 1.27bsc k - - 1.27 k1 0.56 - - l 0.51 0.71 0.61 la 0.51 0.71 0.61 l1 0.05 0.20 0.175 l4 - - 0.125 m 3.50 3.71 3.605 x - - 1.400 y - - 1.900 10 12 11 1 6 8 7 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. powerdi5060 - 8 (type c) dimensions value (in mm) c 1.270 g 0.660 g1 0.820 x 0.610 x1 3.910 x2 1.650 x3 1.650 x4 4.420 y 1.270 y1 1.020 y2 3.810 y3 6.610 detail a 0(4x) seating plane a1 c e 01(4x) d1 e1 d e 1 y x ?1.000 depth 0.070.030 a detail a l k m l1 d2 la e2 b(8x) e/2 1 b1(8x) b2(2x) d2 k1 d3 l4 1 8 y3 x4 y1 y2 x1 g1 x c y(4x) g x2 x3
dm th4007spd q document number: d s 38393 rev. 1 - 2 8 of 8 www.diodes.com november 2015 ? diodes inc orporated d mth4007spd q advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including , but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancemen ts, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this document or any product described herei n; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agre e to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, d amages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, internati onal or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference . only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device o r system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirem ents concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. furthe r, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 5 , diodes incorporated www.d iodes.com
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